This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Siliconix Incorporated. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Jun Hu: MOSFET Termination Structure Inventor
Introduction
Jun Hu is an inventor associated with Belmont, California, and Siliconix Incorporated. His patent work concerns semiconductor device design, specifically a termination structure for a metal oxide semiconductor field effect transistor (MOSFET).
Latest Patents
The provided information identifies one patent for Jun Hu: “Termination structure.” The patent describes a MOSFET device and methods for manufacturing and using it. In some implementations, the device has multiple parallel, separated gate structures and a termination structure positioned beside them. The gate structures have curved edges facing the termination structure, whose opposite edge curves concavely toward those gate edges. This geometry defines the disclosed termination design.
Career Highlights
Hu’s listed patent work reflects a focus on MOSFET structure and semiconductor manufacturing. The supplied data associates him with Siliconix Incorporated and records 1 patent.
Collaborations
Ayman Shibib is identified as Hu’s coworker. The available information does not specify a particular joint patent or collaboration between them.
Conclusion
Jun Hu’s recorded invention addresses MOSFET termination geometry, with curved gate and termination edges forming the central feature of the disclosed design.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile