Dorman C Pitzer

Title: Dorman C Pitzer: Innovator in Trench-Gated MIS Devices

Introduction

Dorman C Pitzer is a notable inventor based in San Ramon, California. He holds a total of 14 patents, showcasing his significant contributions to the field of technology and engineering. His work primarily focuses on advancements in trench-gated Metal-Insulator-Semiconductor (MIS) devices.

Latest Patents

One of Pitzer's latest patents involves trench-gated MIS devices. In this innovation, contact is made to the gate within the trench, eliminating the need for the gate material, typically polysilicon, to extend outside of the trench. This design addresses the issue of stress at the upper corners of the trench. The contact between the gate metal and the polysilicon is usually made in a gate metal region that lies outside the active region of the device. Various configurations for establishing this contact are described, including designs where the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is generally no requirement for a polysilicon mask, which helps in reducing fabrication costs.

Career Highlights

Throughout his career, Dorman C Pitzer has worked with prominent companies such as Siliconix Incorporated and Vishay Siliconix. His experience in these organizations has contributed to his expertise in the development of advanced semiconductor technologies.

Collaborations

Pitzer has collaborated with notable colleagues, including Mike F Chang and Jacek Korec. These partnerships have likely enhanced his innovative capabilities and contributed to the success of his projects.

Conclusion

Dorman C Pitzer's contributions to the field of trench-gated MIS devices reflect his innovative spirit and technical expertise. His patents not only advance technology but also demonstrate the importance of collaboration in achieving significant breakthroughs.