The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Nov. 01, 2010
Anup Bhalla, Santa Clara, CA (US);
Dorman Pitzer, San Jose, CA (US);
Jacek Korec, San Jose, CA (US);
Xiaorong Shi, San Jose, CA (US);
Sik Lui, Sunnyvale, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Dorman Pitzer, San Jose, CA (US);
Jacek Korec, San Jose, CA (US);
Xiaorong Shi, San Jose, CA (US);
Sik Lui, Sunnyvale, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.