The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 1996
Filed:
Dec. 22, 1994
Fwu-Iuan Hshieh, San Jose, CA (US);
Mike Chang, Cupertino, CA (US);
Jun W Chen, Saratoga, CA (US);
King Owyang, Atherton, CA (US);
Dorman C Pitzer, San Ramon, CA (US);
Jan Van Der Linde, Saratoga, CA (US);
Siliconix Incorporated, Santa Clara, CA (US);
Abstract
A power MOSFET is created from a semiconductor body (2000 and 2001) having a main active area and a peripheral termination area. A first insulating layer (2002), typically of substantially uniform thickness, lies over the active and termination areas. A main polycrystalline portion (2003A/2003B) lies over the first insulating layer largely above the active area. First and second peripheral polycrystalline segments (2003C1 and 2003C2) lie over the first insulating layer above the termination area. A gate electrode (2016) contacts the main polycrystalline portion. A source electrode (2015A/2015B) contacts the active area, the termination area, and the first polycrystalline segment. An optional additional metal portion (2019) contacts the second polycrystalline segment. In this case, the second polycrystalline segment extends over a scribe-line section of the termination area so as to be scribed during a scribing operation.