The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1999
Filed:
Sep. 03, 1997
Dorman C Pitzer, San Ramon, CA (US);
Mike F Chang, Cupertino, CA (US);
Hong Wang, Cupertino, CA (US);
Siliconix Incorporated, Santa Clara, CA (US);
Abstract
A planar DMOS power transistor (MOSFET) fabricated using only three masking steps, resulting in a significant reduction in fabrication cost. The resulting device is in terms of operations similar to prior art devices formed using more masking steps. Both the source and body regions are formed by implantations through the identical openings in the polysilicon/gate oxide layers into the substrate. After a subsequent glass layer is deposited and masked to expose openings, body contact regions are implanted into the source regions by overdosing the source region dopant concentration. The third masking step is the metal mask which also forms a termination structure.