The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 2001
Filed:
Apr. 16, 1999
Richard K. Williams, Cupertino, CA (US);
Sung-Shan Tai, San Jose, CA (US);
Dorman C. Pitzer, San Ramon, CA (US);
Wayne B. Grabowski, Los Altos, CA (US);
Anthony Tsui, Saratoga, CA (US);
Mike F. Chang, Cupertino, CA (US);
Siliconix Incorporated, Santa Clara, CA (US);
Abstract
The metal contact to the source and body regions in a vertical planar DMOSFET is formed by fabricating a sidewall spacer on the gate of the MOSFET. With the metal contact self-aligned to the gate in this way, the lateral dimension of each of the cells in the DMOSFET can be significantly reduced without the risk of a short between the contact and the gate, and the packing density of the cells can be increased. In this way, significant reductions in the on-resistance of the device can be achieved.