The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 19, 2019

Filed:

Feb. 27, 2018
Applicant:

Siliconix Incorporated, Santa Clara, CA (US);

Inventors:

Max Shih-kuan Chen, New Taipei, TW;

Hao-Che Chien, Taipei, TW;

Loizos Efthymiou, Cambridge, GB;

Florin Udrea, Cambridge, GB;

Giorgia Longobardi, Cambridge, GB;

Gianluca Camuso, Villach, AT;

Assignee:

SILICONIX INCORPORATED, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/528 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 23/528 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 29/0634 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/405 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H01L 23/5226 (2013.01); H01L 29/41758 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05666 (2013.01); H01L 2924/04941 (2013.01);
Abstract

A power semiconductor device and method for making same are disclosed. The device includes a source bonding pad and a drain bonding pad, a drain metallization structure including a drain field plate connected to the drain bonding pad, and a source metallization structure comprising a source field plate connected to the source bonding pad. At least a portion of at least one of the bonding pads is situated directly over an active area. A dimension of at least one of the field plates varies depending upon the structure adjacent to the field plate.


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