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For the Inventor, By the Inventor

Hauppauge, NY, United States of America

Vishay General Semiconductor, Inc.


USPTO Granted Patents = 56

% Expired Patents = 28.6


Trademarks = 4

Forward Citations = 112

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58 inventors (with patents filed for the assignee):

goldMedal Chih-Ping Peng (10 out of 10 patents)

silverMedal Yih-Yin Lin (10 out of 11 patents)

bronzeMedal Wan-Lan Chiang (9 out of 9 patents)

4.  Ta-Te Chou (9 out of 9 patents)

5.  Lung-Ching Kao (8 out of 8 patents)

6.  Xian Li (8 out of 8 patents)

7.  Yong-Qi Tian (8 out of 8 patents)

8.  Shih-Kuan Chen (6 out of 7 patents)

9.  Xiong-Jie Zhang (6 out of 6 patents)

10.  Hai Fu (6 out of 6 patents)

11.  Max Sk Chen (5 out of 10 patents)

12.  Kuang Hann Lin (5 out of 7 patents)

13.  Huiying Ding (4 out of 4 patents)

14.  Junfeng Liu (4 out of 4 patents)

15.  Longnan Jin (4 out of 4 patents)


Core Competencies:
Semiconductor Package
Side-Wall Plating
GaN-Based Schottky Diode
Trench MOS Device
Voltage Sustaining Layer
Zener Diode
Transient Voltage Suppressor
Power Semiconductor Device
Planar Diode
Heat Dissipation
Conductive Film
Lead Frame

56 patents:

1. 11876003 - Semiconductor package and packaging process for side-wall plating with a conductive film (2024-01-16),
2. 11764075 - Package assembly for plating with selective molding (2023-09-19),
3. 11450534 - Packaging process for side-wall plating with a conductive film (2022-09-20),
4. 11393699 - Packaging process for plating with selective molding (2022-07-19),
5. 10163762 - Lead frame with conductive clip for mounting a semiconductor die with reduced clip shifting (2018-12-25),
6. 10043676 - Local semiconductor wafer thinning (2018-08-07),
7. 9966429 - Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current (2018-05-08),
8. 9537017 - Process for forming a planar diode using one mask (2017-01-03),
9. 9368584 - Gallium nitride power semiconductor device having a vertical structure (2016-06-14),
10. 9331142 - Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage current (2016-05-03),
11. 9281417 - GaN-based schottky diode having large bond pads and reduced contact resistance (2016-03-08),
12. 9263820 - Electrical press-fit pin for a semiconductor module (2016-02-16),
13. 9202935 - Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current (2015-12-01),
14. 9178015 - Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications (2015-11-03),
15. 9041188 - Axial semiconductor package (2015-05-26),
Vishay General Semiconductor, Inc., based in Hauppauge, NY, specializes in the development and manufacturing of advanced semiconductor packaging solutions. The company focuses on core technologies such as semiconductor packages, side-wall plating, and various power semiconductor devices, including GaN-based Schottky diodes and trench MOS devices. Vishay's innovations also encompass voltage sustaining layers, Zener diodes, and transient voltage suppressors, catering to a diverse range of applications across multiple industries.
Profile summary based on public USPTO records.

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USPTO Data Jan 1 1976 - Sep 29 2026

Vishay General Semiconductor, Inc.
56 Patents

#8 in Hauppauge, NY

#386 in New York

#6,346 in US

#12,732 in the World

Hauppauge, NY (US)
Hauppauge, NY, United States of America

Vishay General Semiconductor, Inc.

Forward Citations = 112

58 inventors:

goldMedal Chih-Ping Peng (10 out of 10 patents)

silverMedal Yih-Yin Lin (10 out of 11 patents)

bronzeMedal Wan-Lan Chiang (9 out of 9 patents)

4.  Ta-Te Chou (9 out of 9 patents)

5.  Lung-Ching Kao (8 out of 8 patents)

Please report any incorrect information to [email protected]
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