The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jan. 29, 2015
Applicant:
Vishay General Semiconductor Llc, Hauppauge, NY (US);
Inventors:
Assignee:
VISHAY GENERAL SEMICONDUCTOR LLC, Hauppauge, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 21/22 (2006.01); H01L 23/31 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 21/22 (2013.01); H01L 23/3171 (2013.01); H01L 29/167 (2013.01); H01L 29/66128 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.