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For the Inventor, By the Inventor

Boise, ID, United States of America

Fernando N Gonzalez

This inventor holds 310 USPTO granted patents and 2 published patent applications, primarily in Capacitor-Less Memory (CPC class 437 52). Top assignees: Micron Technology Incorporated, Micron Semiconductor, Inc., Other. Active years: 1984-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fernando N Gonzalez. Retrieved from https://idiyas.com/inventor/fernando-n-gonzalez

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 310 

% Patents Active = 85.2

Average Co-Inventor Count = 1.8

ph-index = 40

Forward Citations = 8,834(Granted Patents)

Forward Citations (Not Self Cited) = 8,571(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Burbank, CA (US) (1984)
  • Boise, IA (US) (1994)
  • Naples, FL (US) (2005)
  • Boise, ID (US) (1989 - 2014)
  • Burleson, TX (US) (2013 - 2014)
  • Richardson, TX (US) (2013 - 2016)

Company Filing History:

goldMedal301 out of 39,383 
 
Micron Technology Incorporated
 patents
silverMedal5 out of 156 
 
Micron Semiconductor, Inc.
 patents
bronzeMedal4 out of 834,708 
Other
 patents

Years Active: 1984-2016

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Areas of Expertise:
Capacitor-Less Memory Cell
Transistor Structures
Integrated Circuitry
Solid State Lighting
Silicon on Insulator
Memory Devices
Vertical Diode Structures
Magnetic Tunneling Junction
DRAM Cells
Electrical Devices
Semiconductor Constructions
Memory Cell Arrays
310 patents (USPTO):Explore Patents
1. 9293185 - Apparatus including a capacitor-less memory cell and related methods (2016-03-22),
2. 9129847 - Transistor structures and integrated circuitry comprising an array of transistor structures (2015-09-08),
3. 8872219 - Multi-dimensional solid state lighting device array system and associated methods and structures (2014-10-28),
4. 8724372 - Capacitor-less memory cell, device, system and method of making same (2014-05-13),
5. 8643110 - Localized biasing for silicon on insulator structures (2014-02-04),
6. 8582350 - Capacitor-less memory cell, device, system and method of making same (2013-11-12),
7. 8551823 - Methods of forming lines of capacitorless one transistor DRAM cells, methods of patterning substrates, and methods of forming two conductive lines (2013-10-08),
8. 8501602 - Method of manufacturing devices having vertical junction edge (2013-08-06),
9. 8501509 - Multi-dimensional solid state lighting device array system and associated methods and structures (2013-08-06),
10. 8451650 - Capacitor-less memory cell, device, system and method of making same (2013-05-28),
11. 8374037 - Method for programming a semiconductor magnetic memory integrating a magnetic tunneling junction above a floating-gate memory cell (2013-02-12),
12. 8203866 - Capacitor-less memory cell, device, system and method of making same (2012-06-19),
13. 8173517 - Method for forming a self-aligned isolation structure utilizing sidewall spacers as an etch mask and remaining as a portion of the isolation structure (2012-05-08),
14. 8159014 - Localized biasing for silicon on insulator structures (2012-04-17),
15. 8124491 - Container capacitor structure and method of formation thereof (2012-02-28),

Title: Fernando Gonzalez - Pioneering Innovator in Semiconductor Technology

Introduction:

Fernando Gonzalez, a Boise-based inventor, is renowned for his significant contributions in the field of semiconductor technology. With an impressive count of 309 patents to his name, his groundbreaking work has revolutionized the memory cell landscape. This article delves into his latest patents, career highlights, collaborations, and the lasting impact of his inventions.

Latest Patents:

One of Gonzalez's recent patents is for an apparatus including a capacitor-less memory cell and related methods. This invention involves creating a capacitor-less memory cell in an active area of a physically isolated portion of a bulk semiconductor substrate. By incorporating a read/write enable transistor and a pass transistor, this memory cell allows for differentiated threshold voltages, enhancing its efficiency and performance.

Another notable patent by Gonzalez is for transistor structures and integrated circuitry comprising an array of transistor structures. This innovation introduces a capacitorless single-transistor dynamic random-access memory (DRAM) cell, which utilizes a floating body region, a first gate, and a pair of opposing second gates. These improvements enhance the storage capacity and operational efficiency of the DRAM cell.

Career Highlights:

During his career, Gonzalez has made significant contributions to the semiconductor landscape. He has worked with renowned companies such as Micron Technology Incorporated. His expertise in developing advanced memory technologies has played a crucial role in shaping the progress of the industry.

Collaborations:

While making strides in the field, Gonzalez has collaborated with esteemed professionals in the semiconductor industry. Notably, he has worked alongside Chandra Mouli and Roger R. Lee. These collaborations have facilitated the exchange of knowledge and ideas, fostering innovation within the sector.

Conclusion:

Fernando Gonzalez's prolific journey as an inventor and his remarkable portfolio of 309 patents demonstrate his profound impact on the field of semiconductor technology. Through his ingenious techniques, such as the development of capacitor-less memory cells and transistor structures, he has revolutionized memory technology and paved the way for more efficient and powerful electronic devices. Gonzalez's collaborations with industry experts have further amplified the impact of his inventions. His contributions continue to drive progress and shape the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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