The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Dec. 29, 2021
Micron Technology, Inc., Boise, ID (US);
Bo Zhao, Boise, ID (US);
Matthew J. King, Boise, ID (US);
Jason Reece, Boise, ID (US);
Michael J. Gossman, Meridian, ID (US);
Shruthi Kumara Vadivel, Boise, ID (US);
Martin J. Barclay, Middleton, ID (US);
Lifang Xu, Boise, ID (US);
Joel D. Peterson, Boise, ID (US);
Matthew Park, Boise, ID (US);
Adam L. Olson, Boise, ID (US);
David A. Kewley, Boise, ID (US);
Xiaosong Zhang, Boise, ID (US);
Justin B. Dorhout, Boise, ID (US);
Zhen Feng Yow, Singapore, SG;
Kah Sing Chooi, Singapore, SG;
Tien Minh Quan Tran, Singapore, SG;
Biow Hiem Ong, Singapore, SG;
Micron Technology, Inc., Boise, ID (US);
Abstract
A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.