The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Sep. 07, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Miao Shen, Wuhan, CN;
Li Hong Xiao, Wuhan, CN;
Yushi Hu, Wuhan, CN;
Qian Tao, Wuhan, CN;
Mei Lan Guo, Wuhan, CN;
Yong Zhang, Wuhan, CN;
Jian Hua Sun, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Aspects of the disclosure provide a method for fabricating semiconductor device. The method includes characterizing an etch process that is used to etch channel holes and dummy channel holes in a stack of alternating sacrificial gate layers and insulating layers upon a substrate of a semiconductor device. The channel holes are in a core region and the dummy channel holes are in a staircase region. The stack of alternating sacrificial gate layers and insulating layers extend from the core region into in the staircase region of a stair-step form. The method further includes determining a first shape for defining the dummy channel holes in a layout based on the characterization of the etch process. The first shape is different from a second shape for defining the channel holes.