Yushi Hu

This inventor holds 45 USPTO granted patents and 7 published patent applications and 7 EPO patents, primarily in 3D Memory Devices. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2018-2026.

USPTO Granted Patents = 45 (Patent Applications = 7)

% Patents Active = 100.0

EPO Patents = 7 (Patent Applications = 8)

Average Co-Inventor Count = 6.6

ph-index = 7

Forward Citations = 183(Granted Patents)

Location History:

Hubei, CN (2018 - 2024)
Wuhan, CN (2019 - 2024)

Company Filing History:

44 out of 1,190

Yangtze Memory Technologies Co., Ltd.

patents

1 out of 279

Yangtze Memory Technologies., Ltd.

patents

Years Active: 2018-2026

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Areas of Expertise:

3D NAND Memory

Memory Cell Structure

Vertical Memory Devices

Channel Hole Plug

Through Array Contacts

Multiple-Stack Memory

Fabrication Methods

Wafer Flatness Control

NAND Strings

Inter-Level Channel Connector

Memory Device Formation

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12575105 - Multiple-stack three-dimensional memory device and fabrication method thereof (2026-03-10),

2. 12490440 - Three-dimensional memory devices and fabricating methods thereof (2025-12-02),

3. 12446217 - 3D NAND memory device and method of forming the same (2025-10-14),

4. 12063780 - Memory cell structure of a three-dimensional memory device (2024-08-13),

5. 11991880 - Three-dimensional memory devices and fabricating methods thereof (2024-05-21),

6. 11968832 - Multiple-stack three-dimensional memory device and fabrication method thereof (2024-04-23),

7. 11943928 - Method for forming channel hole plug of three-dimensional memory device (2024-03-26),

8. 11889686 - Vertical memory devices (2024-01-30),

9. 11805646 - Three-dimensional memory devices and methods for forming the same (2023-10-31),

10. 11805643 - Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector (2023-10-31),

11. 11737263 - 3D NAND memory device and method of forming the same (2023-08-22),

12. 11699657 - Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer (2023-07-11),

13. 11690219 - Three-dimensional memory devices having through array contacts and methods for forming the same (2023-06-27),

14. 11581322 - Three-dimensional memory devices having through array contacts and methods for forming the same (2023-02-14),

15. 11532636 - Three-dimensional memory devices having through array contacts and methods for forming the same (2022-12-20),

Title: Inventor Yushi Hu - Revolutionizing Technology in Hubei, CN

Introduction: Yushi Hu is a visionary inventor hailing from Hubei, China, known for his groundbreaking contributions to the field of technology.

Latest Patents: Yushi Hu holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Yushi Hu has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible in the realm of innovation.

Collaborations: Throughout his career, Yushi Hu has collaborated with top scientists, engineers, and researchers globally, fostering a culture of creativity and excellence in all his projects.

Conclusion: Yushi Hu's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the world of inventions.