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For the Inventor, By the Inventor

Hubei, China

Yushi Hu

USPTO Granted Patents = 44 

 

Average Co-Inventor Count = 6.5

ph-index = 6

Forward Citations = 155(Granted Patents)


Location History:

  • Hubei, CN (2018 - 2024)
  • Wuhan, CN (2019 - 2024)

Company Filing History:

goldMedal44 out of 1,157 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2018-2025

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Areas of Expertise:
Three-Dimensional Memory Devices
3D NAND Memory Device
Memory Cell Structure
Vertical Memory Devices
Multi-Level Vertical Memory Device
Through Array Contacts
Channel Hole Plug
NAND Strings
Wafer Flatness Control
Dual-Deck Channel Hole Structure
Staircase Structures
Fabrication Methods
44 patents (USPTO):Explore Patents
1. 12490440 - Three-dimensional memory devices and fabricating methods thereof (2025-12-02),
2. 12446217 - 3D NAND memory device and method of forming the same (2025-10-14),
3. 12063780 - Memory cell structure of a three-dimensional memory device (2024-08-13),
4. 11991880 - Three-dimensional memory devices and fabricating methods thereof (2024-05-21),
5. 11968832 - Multiple-stack three-dimensional memory device and fabrication method thereof (2024-04-23),
6. 11943928 - Method for forming channel hole plug of three-dimensional memory device (2024-03-26),
7. 11889686 - Vertical memory devices (2024-01-30),
8. 11805646 - Three-dimensional memory devices and methods for forming the same (2023-10-31),
9. 11805643 - Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector (2023-10-31),
10. 11737263 - 3D NAND memory device and method of forming the same (2023-08-22),
11. 11699657 - Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer (2023-07-11),
12. 11690219 - Three-dimensional memory devices having through array contacts and methods for forming the same (2023-06-27),
13. 11581322 - Three-dimensional memory devices having through array contacts and methods for forming the same (2023-02-14),
14. 11532636 - Three-dimensional memory devices having through array contacts and methods for forming the same (2022-12-20),
15. 11502094 - Multi-level vertical memory device including inter-level channel connector (2022-11-15),

Title: Inventor Yushi Hu - Revolutionizing Technology in Hubei, CN

Introduction: Yushi Hu is a visionary inventor hailing from Hubei, China, known for his groundbreaking contributions to the field of technology.

Latest Patents: Yushi Hu holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Yushi Hu has worked with leading research institutions and tech companies, consistently pushing the boundaries of what is possible in the realm of innovation.

Collaborations: Throughout his career, Yushi Hu has collaborated with top scientists, engineers, and researchers globally, fostering a culture of creativity and excellence in all his projects.

Conclusion: Yushi Hu's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the world of inventions.

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