The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Feb. 07, 2024
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Jun Liu, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Li Hong Xiao, Wuhan, CN;
Zhenyu Lu, Wuhan, CN;
Qian Tao, Wuhan, CN;
Yushi Hu, Wuhan, CN;
Sizhe Li, Wuhan, CN;
Zhao Hui Tang, Wuhan, CN;
Yu Ting Zhou, Wuhan, CN;
Zhaosong Li, Wuha, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
In an example, a memory device includes a first stack structure and a second stack structure over the first stack structure. Each of the first stack structure and the second stack structure includes alternately stacked conductor layers and first insulating layers. The memory device also includes a first channel structure extending through the first stack structure, and a second channel structure extending through the second stack structure and connected with the first channel structure. A width of an end of the first channel structure closer to the second channel structure is greater than that of the second channel structure closer to the first channel structure. The memory device further includes a pillar structure extending through the first stack structure and the second stack structure. The pillar structure includes a metal layer.