Hubei, China

Yu Ting Zhou

This inventor holds 20 USPTO granted patents and 13 published patent applications and 2 EPO patents, primarily in Three-Dimensional Memory. Top assignees: Yangtze Memory Technologies Co., Ltd., Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu Ting Zhou. Retrieved from https://idiyas.com/inventor/yu-ting-zhou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Wuhan, CN (2021 - 2022)
  • Hubei, CN (2020 - 2024)

Company Filing History:


Years Active: 2020-2025

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Areas of Expertise:
Three-Dimensional Memory
Staircase Formation
Fabrication Method
Semiconductor Device
Multiple-Stack
Vertically Separated Openings
Through Array Contact
Memory Device
Manufacturing Method
TAC
Stacking Structure
Memory Technology
20 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: Yu Ting Zhou**

Introduction

Yu Ting Zhou is a prominent inventor based in Hubei, China, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 19 patents, his work primarily focuses on the development and fabrication of advanced memory devices. His innovative approaches have set new standards in the realm of three-dimensional memory solutions.

Latest Patents

Among Yu Ting Zhou's notable patents, he has developed a **Multiple-stack three-dimensional memory device and fabrication method thereof**. This invention reveals methods and structures for creating a three-dimensional memory device. The disclosed method consists of forming a plurality of dielectric stacks stacked over a substrate, creating a multiple-stack staircase structure. Each dielectric stack comprises pairs of dielectrics arranged vertically to the substrate's surface. Additionally, his patent titled **Staircase formation in three-dimensional memory device** describes a method for forming a staircase structure for 3D memory. This process involves creating an alternating layer stack and patterning a mask stack to define a staircase region, resulting in a complex staircase structure with multiple steps.

Career Highlights

Yu Ting Zhou has showcased his expertise while contributing to leading semiconductor companies. He has worked with **Yangtze Memory Technologies Co., Ltd.** and **Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.** These roles have allowed him to develop innovative designs and processes crucial for the advancement of memory technology.

Collaborations

Throughout his career, Yu has collaborated with esteemed professionals, including his coworkers Li Hong Xiao and Zhao Hui Tang. Their collective expertise in the semiconductor domain has propelled forward-thinking projects and breakthroughs in memory device innovations.

Conclusion

Yu Ting Zhou stands out as a dynamic inventor making substantial contributions to the semiconductor industry. His extensive patent portfolio and collaborative efforts reflect his commitment to advancing technology. As he continues to innovate in the field of three-dimensional memory devices, Yu's work shapes the future of memory solutions and inspires new generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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