The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Nov. 21, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Jun Liu, Wuhan, CN;

Li Hong Xiao, Wuhan, CN;

Yu Ting Zhou, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11568 (2017.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11568 (2013.01); H01L 21/31105 (2013.01); H01L 29/40117 (2019.08);
Abstract

Embodiments of three-dimensional (3D) memory devices having a memory layer that confines electron transportation and methods for forming the same are disclosed. The 3D memory device can include a structure of a plurality of gate electrodes insulated by a sealing structure over a substrate. The sealing structure can include an airgap between adjacent gate electrodes along a direction perpendicular to a top surface of the substrate. The 3D memory device can also include a semiconductor channel extending from a top surface of the structure to the substrate. The semiconductor channel can include a memory layer that has two portions extending along different directions. The 3D memory device can further include a source structure extending from the top surface of the structure to the substrate and between adjacent gate electrodes along a direction parallel to the top surface the substrate.


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