The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Dec. 14, 2020
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Yue Qiang Pu, Hubei, CN;
Jin Wen Dong, Hubei, CN;
Jun Chen, Hubei, CN;
Zhenyu Lu, Hubei, CN;
Qian Tao, Hubei, CN;
Yushi Hu, Hubei, CN;
Zhao Hui Tang, Hubei, CN;
Li Hong Xiao, Hubei, CN;
Yu Ting Zhou, Hubei, CN;
Sizhe Li, Hubei, CN;
Zhaosong Li, Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Abstract
Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate having one or more first recesses in a first region and one or more second recesses in a second region. A liner layer is disposed over the sidewalls and bottom of the one or more first recesses in the first region and an epitaxially-grown material is formed in the one or more second recesses in the second region. One or more NAND strings are formed over the epitaxially-grown material disposed in the one or more second recesses, and one or more vertical structures are formed over the one or more first recesses in the first region.