Zhenyu Lu

Title: Inventor Spotlight: Zhenyu Lu and his Contributions to 3D Memory Devices

Introduction:

In the realm of innovation and patenting, Zhenyu Lu stands out as a prominent inventor hailing from Hubei, China. With an impressive collection of 51 patents to his name, Lu has made significant contributions to the field of three-dimensional (3D) memory devices. Let's delve deeper into his latest patents and his role within the prestigious Yangtze Memory Technologies Co., Ltd.

Latest Patents:

1. "Three-dimensional memory devices having a plurality of NAND strings located between a substrate and a single crystalline silicon layer":

Lu's patent introduces groundbreaking advancements in the source structure of 3D memory devices. The patent describes a NAND memory device composed of various essential components, including a substrate, an alternating conductor/dielectric stack, a NAND string, a source conductor layer, and a source contact. By incorporating conduction regions comprised of specialized metals, metal alloys, and metal silicides, the source conductor layer facilitates effective electrical connection between the NAND string and source contact.

2. "Through array contact structure of three-dimensional memory device":

This patent focuses on the through array contact structures of 3D NAND memory devices. Lu's innovation showcases an alternating layer stack consisting of a first region with an alternating dielectric stack and a second region with an alternating conductor/dielectric stack. Key to this invention is the barrier structure that vertically separates the two regions, ensuring enhanced performance. Furthermore, the patent highlights the presence of multiple through array contacts, with at least one being electrically connected to the peripheral circuit.

Role in Yangtze Memory Technologies Co., Ltd.:

Zhenyu Lu is an integral part of Yangtze Memory Technologies Co., Ltd., a renowned technology company operating in China. Specializing in memory research and development, Yangtze Memory Technologies is at the forefront of advancing memory storage capabilities. Lu's contributions to the company's patent portfolio demonstrate his expertise and innovative mindset in the field of 3D memory devices. Collaborating with coworkers Jun Chen and Qian Tao, Lu has helped drive the company's technological advancements and establish its position as a formidable player in the industry.

Conclusion:

Zhenyu Lu's remarkable achievements and patents in the field of 3D memory devices has solidified his status as an influential inventor. His pioneering work in developing source structures and through array contact structures has undoubtedly pushed the boundaries of memory technologies. As an integral part of Yangtze Memory Technologies Co., Ltd., Lu continues to make significant contributions to the company's innovative portfolio. We can only anticipate further developments from this exceptional inventor as he leaves an indelible mark on the world of innovations and patents.

(Note: Yangtze Memory Technologies Co., Ltd.'s name has been presented in a more readable format rather than in all capital letters for better clarity and comprehension.)