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Yangtze Memory Technologies., Ltd.

USPTO Granted Patents = 291

EPO Patents = 46

Forward Citations = 0

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427 inventors (with patents filed for the assignee):

Zongliang Huo (27 out of 134 patents)

Zhiliang Xia (23 out of 197 patents)

Wenxi Zhou (21 out of 156 patents)

4. Hongtao Liu (17 out of 55 patents)

5. XiangNan Zhao (14 out of 42 patents)

6. Kun Zhang (13 out of 108 patents)

7. Wei Liu (13 out of 123 patents)

8. Lei Xue (11 out of 41 patents)

9. Lu Guo (11 out of 21 patents)

10. Li Xiang (10 out of 19 patents)

11. Wei Xu (10 out of 61 patents)

12. Di Wang (10 out of 41 patents)

13. Wei Huang (10 out of 29 patents)

14. Xingwei Tang (10 out of 14 patents)

15. Guangchang Ye (9 out of 15 patents)

Core Competencies:

Memory Device

Memory System

3D NAND

Operation Method

Data Management

Memory Controller

Power Control

Error Injection

Fabrication Method

Read Operation

Semiconductor Device

Storage Medium

291 patents: Sort by Forward Citations

1. 12757722 - Memory and fabrication method thereof and memory system (2026-10-06),

2. 12757673 - Workpiece tape removing (2026-10-06),

3. 12757388 - Word-line-pickup structure and method for forming the same (2026-10-06),

4. 12755801 - Memory, operation method thereof, and memory system (2026-10-06),

5. 12755794 - Architecture and method for NAND memory operation (2026-10-06),

6. 12751001 - Semiconductor device, memory system and fabrication method of a semiconductor device (2026-09-29),

7. 12749542 - Operation method of memory, and memory, memory system, and electronic system (2026-09-29),

8. 12748691 - Memory device and operation thereof (2026-09-29),

9. 12748545 - Methods and devices for dynamic management of host performance boost regions (2026-09-29),

10. 12745666 - Package structures, fabricating methods thereof, and memory systems (2026-09-22),

11. 12745394 - Three-dimensional memory and manufacturing method thereof (2026-09-22),

12. 12744095 - Memory device and operation method thereof (2026-09-22),

13. 12740380 - Wafer bonding method and system (2026-09-15),

14. 12740051 - Memory devices having vertical transistors and fabricating methods thereof (2026-09-15),

15. 12738334 - Memory devices, memory systems, and control methods thereof to identify a programming failure (2026-09-15),

Yangtze Memory Technologies, Ltd. is a prominent player in the memory systems sector, headquartered in Wuhan, China. The company specializes in the development and manufacturing of advanced memory devices, particularly focusing on 3D NAND technology. Its expertise extends to memory systems, operation methods, data management, and memory controllers. Yangtze Memory Technologies is committed to innovation in power control and error injection techniques, positioning itself as a key contributor to the evolving landscape of memory solutions.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

291 Patents

#5 in Wuhan

#125 in China

#3,062 in the World

Yangtze Memory Technologies., Ltd.

Forward Citations = 0

427 inventors:

Zongliang Huo (27 out of 134 patents)

Zhiliang Xia (23 out of 197 patents)

Wenxi Zhou (21 out of 156 patents)

4. Hongtao Liu (17 out of 55 patents)

5. XiangNan Zhao (14 out of 42 patents)

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