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For the Inventor, By the Inventor

Wuhan, China

Lei Xue

This inventor holds 42 USPTO granted patents and 24 published patent applications and 5 EPO patents, primarily in 3D Memory Technology. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lei Xue. Retrieved from https://idiyas.com/inventor/lei-xue-9vkt7lwl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 

% Patents Active = 78.6

 

Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 23(Granted Patents)


Location History:

  • Hubei, CN (2021 - 2023)
  • Wuhan, CN (2020 - 2024)

Company Filing History:

goldMedal30 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents
silverMedal12 out of 305 
 
Yangtze Memory Technologies., Ltd.
 patents

Years Active: 2020-2026

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Areas of Expertise:
Semiconductor Device
Memory System
3D NAND
Fabrication Method
Memory Device
Channel Structures
Stacked Structures
Charge Confinement
Transistors
Plum Blossom Shape
On-Chip Capacitors
Bit Lines
42 patents (USPTO):Explore Patents
1. 12772820 - Semiconductor structure, three-dimensional memory, memory system, and electronic device (2026-10-20),
2. 12721133 - Contact structure and method of forming the same (2026-08-25),
3. 12720771 - 3D memory cell with dual-side contacts and method of fabrication (2026-08-25),
4. 12713599 - THREE-DIMENSIONAL NAND MEMORY DEVICE WITH IMPROVED LEAKAGE CURRENT AND FABRICATION METHOD (2026-08-18),
5. 12706145 - Three-dimensional memory devices and fabricating methods thereof (2026-08-11),
6. 12701707 - Memory device containing TSG deck with reduced wafer bow and method of forming the same (2026-08-04),
7. 12660185 - Three-dimensional memory devices and methods for forming the same (2026-06-16),
8. 12641789 - Three-dimensional NAND memory device and method of forming the same (2026-05-26),
9. 12581649 - Semiconductor device, fabrication method, and memory system (2026-03-17),
10. 12568624 - Memory device containing TSG deck and method of forming the same (2026-03-03),
11. 12543318 - Three-dimensional memory with stacked select-gate structures (2026-02-03),
12. 12532468 - Three-dimensional memory devices with channel structures having plum blossom shape (2026-01-20),
13. 12507406 - 3D memory device (2025-12-23),
14. 12484226 - Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits (2025-11-25),
15. 12453094 - Method for removing sacrificial layers of a stack of a three-dimensional semiconductor structure in two steps (2025-10-21),

Title: The Innovative Journey of Lei Xue

Introduction: Lei Xue is a pioneering inventor hailing from Wuhan, China. Her groundbreaking work in the field of technology has earned her recognition on both a national and international level.

Latest Patents: Lei Xue's most recent patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we approach transportation and safety on the roads.

Career Highlights: Lei Xue's career is marked by a series of remarkable achievements, including being awarded the prestigious National Innovation Award for her contributions to the tech industry. She has also been a keynote speaker at various tech conferences, sharing her expertise with aspiring inventors.

Collaborations: Lei Xue has collaborated with leading tech companies and research institutions to further her research and bring her inventions to life. Her partnerships have led to the development of cutting-edge technologies that have the potential to shape the future of various industries.

Conclusion: Lei Xue's dedication to innovation and her relentless pursuit of technological advancement make her a true trailblazer in the world of inventors. Her work continues to inspire and pave the way for future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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