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For the Inventor, By the Inventor

Wuhan, China

Lei Xue

USPTO Granted Patents = 29 

 

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Hubei, CN (2021 - 2023)
  • Wuhan, CN (2020 - 2024)

Company Filing History:

goldMedal29 out of 1,139 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2020-2025

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29 patents (USPTO):Explore Patents
1. 12484226 - Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits (2025-11-25),
2. 12453094 - Method for removing sacrificial layers of a stack of a three-dimensional semiconductor structure in two steps (2025-10-21),
3. 12402309 - Three-dimensional memory devices and fabricating methods thereof (2025-08-26),
4. 12274066 - Memory peripheral circuit having three-dimensional transistors and method for forming the same (2025-04-08),
5. 12185536 - Three-dimensional memory devices with reduced cell interference and fabrication methods thereof (2024-12-31),
6. 12171098 - Three-dimensional memory device with improved charge lateral migration and method for forming the same (2024-12-17),
7. 12089405 - Three-dimensional memory devices with channel structures having plum blossom shape (2024-09-10),
8. 12063784 - Memory peripheral circuit having three-dimensional transistors and method for forming the same (2024-08-13),
9. 12052866 - Two-step L-shaped selective epitaxial growth (2024-07-30),
10. 12052865 - Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the same (2024-07-30),
11. 12035524 - Channel structures having protruding portions in three-dimensional memory device and method for forming the same (2024-07-09),
12. 11955422 - On-chip capacitors in semiconductor devices and methods for forming the same (2024-04-09),
13. 11925019 - Channel structures having protruding portions in three-dimensional memory device and method for forming the same (2024-03-05),
14. 11917823 - Channel structures having protruding portions in three-dimensional memory device and method for forming the same (2024-02-27),
15. 11877449 - Methods for forming three-dimensional memory devices with channel structures having plum blossom shape (2024-01-16),

Title: The Innovative Journey of Lei Xue

Introduction: Lei Xue is a pioneering inventor hailing from Wuhan, China. Her groundbreaking work in the field of technology has earned her recognition on both a national and international level.

Latest Patents: Lei Xue's most recent patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we approach transportation and safety on the roads.

Career Highlights: Lei Xue's career is marked by a series of remarkable achievements, including being awarded the prestigious National Innovation Award for her contributions to the tech industry. She has also been a keynote speaker at various tech conferences, sharing her expertise with aspiring inventors.

Collaborations: Lei Xue has collaborated with leading tech companies and research institutions to further her research and bring her inventions to life. Her partnerships have led to the development of cutting-edge technologies that have the potential to shape the future of various industries.

Conclusion: Lei Xue's dedication to innovation and her relentless pursuit of technological advancement make her a true trailblazer in the world of inventors. Her work continues to inspire and pave the way for future generations of inventors to push the boundaries of what is possible.

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