The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Dec. 30, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Lei Xue, Wuhan, CN;
Wenbin Zhou, Wuhan, CN;
Wei Xu, Wuhan, CN;
Yanwei Shi, Wuhan, CN;
Zhengliang Xia, Wuhan, CN;
Han Yang, Wuhan, CN;
Xinwei Zou, Wuhan, CN;
Zhaohui Tang, Wuhan, CN;
Jiaji Wu, Wuhan, CN;
Cheng Chen, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A semiconductor device includes a base and a stack structure. The base includes a first surface defining at least one memory plane region. The stack structure is disposed on the first surface, and includes a first portion located at the edge of the memory plane region and a second portion different from the first portion. The first portion includes first contact structures penetrating through the stack structure in a first direction and extending to the base. The second portion includes second contact structures electrically connected with corresponding gate conductor layers in the stack structure. A top surface of the first contact structure away from the base is flush with a top surface of the second contact structure away from the base.