Zongliang Huo

Wuhan, China

Zongliang Huo

This inventor holds 139 USPTO granted patents and 194 published patent applications and 17 EPO patents, primarily in Three-Dimensional Memory (CPC class H01L27-11582). Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zongliang Huo. Retrieved from https://idiyas.com/inventor/zongliang-huo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 139 

% Patents Active = 77.0

 

Average Co-Inventor Count = 4.8

ph-index = 5

Forward Citations = 141(Granted Patents)

Forward Citations (Not Self Cited) = 77(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Hubei, CN (2019 - 2024)
  • Wuhan, CN (2020 - 2024)

Company Filing History:


Years Active: 2019-2026

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Areas of Expertise:
Three-Dimensional Memory
Fabrication Method
Vertical Transistors
NAND Memory
Wafer Bow
Stacked Storage
Control Gate Structures
Thermal Management
139 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Zongliang Huo

Introduction

Zongliang Huo, an accomplished inventor based in Wuhan, China, has made significant strides in the field of memory devices. With an impressive portfolio of 80 patents, Huo has emerged as a prominent figure in technological innovation, particularly in three-dimensional memory structures.

Latest Patents

Among Huo's most recent patents are two notable innovations that push the boundaries of memory device technology. The first patent describes a "Word line structure of a three-dimensional memory device." This innovative memory device comprises a substrate with a stack positioned above it. A unique feature of this design includes a gate line slit that separates the stack into two distinct portions, further enhanced by a connection portion made up of at least two sub-connection portions that enhance functionality.

The second patent focuses on a "Three-dimensional memory device having a staircase structure and method for forming the same." This advancement incorporates interleaved conductive and dielectric layers, which are arranged to resemble stairs. Each stair includes landing structures made from different materials, optimizing the device's performance and potential applications in modern computing technology.

Career Highlights

Huo currently works at Yangtze Memory Technologies Co., Ltd., a company known for its commitment to advancing memory technology. His role at the company highlights his expertise in the field, allowing him to contribute dynamically to groundbreaking research and development efforts.

Collaborations

In his pursuits, Zongliang Huo collaborates closely with other skilled professionals, including colleagues Zhiliang Xia and Ping Yan. These collaborations foster an environment of creativity and innovation, enhancing the progress of technological advancements in their respective projects.

Conclusion

Zongliang Huo's contributions to the realm of memory devices underscore the importance of innovation in the tech industry. With a robust body of work represented by numerous patents, he continues to influence the evolution of 3D memory technology, and his collaborative efforts with talented coworkers demonstrate the power of teamwork in achieving remarkable advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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