The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Mar. 22, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Lei Liu, Wuhan, CN;
Lei Jin, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A three-dimensional (3D) memory device includes a memory string, a coarse top select gate (TSG) line configured to couple a coarse threshold voltage (V) for programming the memory string, a word line configured to program the memory string, a buffer TSG line configured to couple a buffer threshold voltage (V) for programming the memory string, a fine TSG line configured to couple a fine threshold voltage (V) for programming the memory string, and a coarse TSG cut disposed between the memory string and a second memory string adjacent the memory string. The 3D memory device can intrinsically increase the coarse threshold voltage (V), decrease leakage current, dynamically adjust and fine tune a threshold voltage (V) of the memory string, and increase TSG reliability.