Semiconductor structure, three-dimensional memory, memory system, and electronic device

Abstract

A semiconductor structure includes a stack structure, first gate isolation structures, and conductive structures. The stack structure includes gate layers and first dielectric layers disposed alternately. The first gate isolation structures extend along a first direction, and the first gate isolation structures are arranged at intervals along a second direction and divide the stack structure into at least one block comprising a memory region and a connection region that are distributed along the first direction. The conductive structures are located in the connection region, and orthographic projections of upper ends of at least two conductive structures on a reference plane at least partially overlap. The reference plane is perpendicular to the second direction, and the first direction is perpendicular to the second direction.