Hubei, China

Bin Yuan

This inventor holds 20 USPTO granted patents and 20 published patent applications, primarily in Three-Dimensional Memory. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd., Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bin Yuan. Retrieved from https://idiyas.com/inventor/bin-yuan-a82yybrh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 5.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Hubei, CN (2020 - 2024)
  • Wuhan, CN (2023 - 2024)

Company Filing History:


Years Active: 2020-2026

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Areas of Expertise:
Three-Dimensional Memory
Fabrication Methods
Semiconductor Structures
Gate Drive Circuits
Vertical Memory Devices
Isolation Structures
Memory Systems
Contact Structures
Dual-Side Contacts
NAND Memory Devices
Staircase Gate Stack
Gateline Mask Design
20 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Bin Yuan

Introduction

Bin Yuan is a prominent inventor based in Hubei, China. He has made significant contributions to the field of semiconductor technology, holding a total of 20 patents. His work focuses on advanced memory devices and semiconductor designs, showcasing his expertise and innovative spirit.

Latest Patents

One of Bin Yuan's latest patents is the "Gateline mask design for removing sacrificial gateline polysilicon within stair step area." This invention describes a semiconductor device that includes a stack of alternating word line layers and insulating layers. The stack features a core area, a stair step area, and an optional dummy transition area connecting the two. The device also incorporates a gate line trench that varies in width between the core and stair step areas. Additionally, it includes a first channel structure and a stair step contact that connects to one of the word line layers.

Another notable patent is for "Three-dimensional memory devices and methods for forming the same." This invention outlines a 3D memory device that consists of a staircase, multiple contacts, and groups of support structures arranged in a specific configuration. The design emphasizes the innovative arrangement of support structures and contacts, enhancing the functionality of memory devices.

Career Highlights

Bin Yuan has worked with several leading companies in the semiconductor industry. Notably, he has been associated with Yangtze Memory Technologies Co., Ltd. and Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. His experience in these organizations has contributed to his development as a leading inventor in the field.

Collaborations

Throughout his career, Bin Yuan has collaborated with talented individuals such as Xiangning Wang and Zongke Xu. These partnerships have fostered innovation and have been instrumental in the advancement of semiconductor technologies.

Conclusion

Bin Yuan's contributions to semiconductor technology and memory devices highlight his innovative capabilities and dedication to advancing the field. His patents reflect a deep understanding of complex systems and a commitment to pushing the boundaries of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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