logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12764947 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

May. 24, 2023

Staircase connection structure for three-dimensional memory devices

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Kun Zhang, Wuhan, CN;

Linchun Wu, Wuhan, CN;

Cuicui Kong, Wuhan, CN;

Wenxi Zhou, Wuhan, CN;

Zhiliang Xia, Wuhan, CN;

Zongliang Huo, Wuhan, CN;

Assignee:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Attorney:

Conley Rose, P.C.

Primary Examiner:

David A Zarneke

Int. Cl.
CPC ...
H10B 41/20 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 51/20 (2023.01); H10B 53/20 (2023.01);
U.S. Cl.
CPC ...
H10B 41/20 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/20 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 51/20 (2023.02); H10B 53/20 (2023.02);
Abstract

A memory device can include channel structures in a first region. The memory device can also include a plurality of word line cavity structures in a second region abutting the first region. The plurality of word line cavity structures can extend along a first direction. Each of the word line cavity structures can include a first contact structure in a first side of the word line cavity structure along a second direction perpendicular to the first direction. Each of the word line cavity structures can also include a second contact structure in a second side of the word line cavity structure along the second direction. The second side can be opposite to the first side. Each of the word line cavity structures can further include a slit structure. The first contact structure and the second contact structure can be separated with the slit structure along the second direction.

Find Patent Forward Citations

Zhang, Kun. (2026). Staircase connection structure for three-dimensional memory devices (U.S. Patent No. 12764947). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12764947

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…