For the Inventor, By the Inventor

Enter inventor name

Kun Zhang

USPTO Granted Patents = 87 (Patent Applications = 85)

EPO Patents = 13 (Patent Applications = 33)

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 35(Granted Patents)

Forward Citations (Not Self Cited) = 20(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hubei, CN (2019 - 2024)
Wuhan, CN (2021 - 2024)

Company Filing History:

86 out of 1,157

Yangtze Memory Technologies Co., Ltd.

Central China Normal University

Years Active: 2019-2025

Loading Chart...

Loading Chart...

Areas of Expertise:

Three-Dimensional Memory Devices

Semiconductor Fabrication

Dynamic Flash Memory

NAND Memory

Vertical Memory Devices

Thermal Treatment of Semiconductor Layers

Non-Volatile Memory Devices

Memory Device Manufacturing

Backside Interconnect Structures

Recess Gate Transistors

Conductive Layer Stacking

Data Erasing Methods

87 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12501614 - Three-dimensional memory devices with stack structures, and fabricating methods thereof (2025-12-16),

2. 12490432 - Method of fabricating a semiconductor device using laser annealing (2025-12-02),

3. 12490430 - Three-dimensional memory devices and methods for forming the same (2025-12-02),

4. 12477749 - Three-dimensional memory devices having semiconductor assemblies bonded by bonding layer and methods for forming the same (2025-11-18),

5. 12444679 - Three-dimensional memory devices having a cylindrical body and plate line contact segments (2025-10-14),

6. 12439584 - Dynamic flash memory (DFM) with ring-type insulator in channel for improved retention (2025-10-07),

7. 12432918 - Three-dimensional memory devices and methods for forming the same (2025-09-30),

8. 12424544 - Three-dimensional NAND memory and fabrication method thereof (2025-09-23),

9. 12419050 - Semiconductor device and its manufacturing method, memory and memory system (2025-09-16),

10. 12412855 - Vertical memory devices (2025-09-09),

11. 12406928 - Three-dimensional memory devices and fabricating methods thereof (2025-09-02),

12. 12402313 - Methods for forming three-dimensional memory device (2025-08-26),

13. 12396171 - Method of fabricating three-dimensional NAND memory (2025-08-19),

14. 12388037 - Three-dimensional memory devices and methods for forming the same (2025-08-12),

15. 12388036 - Three-dimensional memory devices and methods for forming the same (2025-08-12),

Title: The Innovative Journey of Kun Zhang

Introduction: Kun Zhang, a pioneering inventor hailing from Wuhan, China, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Kun Zhang's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Kun Zhang has established himself as a leading figure in the tech industry, holding numerous patents that have revolutionized various sectors. His innovative solutions have garnered international recognition and praise.

Collaborations: Kun Zhang has collaborated with top research institutions, leading companies, and renowned universities worldwide to further his research and bring his inventions to life. His ability to work across disciplines has led to the development of groundbreaking technologies.

Conclusion: Kun Zhang's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a visionary inventor. His contributions continue to inspire the next generation of inventors and shape the future of technology.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…