The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Dec. 29, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Di Wang, Wuhan, CN;

Lei Liu, Wuhan, CN;

Yuancheng Yang, Wuhan, CN;

Wenxi Zhou, Wuhan, CN;

Kun Zhang, Wuhan, CN;

Tao Yang, Wuhan, CN;

Dongxue Zhao, Wuhan, CN;

Zhiliang Xia, Wuhan, CN;

Zongliang Huo, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/40 (2023.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 41/40 (2023.02); H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A memory device includes an array of memory cells disposed on a first side of a first semiconductor layer, and a peripheral circuit bonded to the array of memory cells. Each of the memory cells includes a semiconductor body extending in a first direction, a first terminal and a second terminal are formed at both ends of the semiconductor body; a word line extending in a second direction perpendicular to the first direction; plate lines extending in the second direction; and a first dielectric layer disposed between the semiconductor body and the word line and the plate line.


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