Wuhan, China

Di Wang

This inventor holds 42 USPTO granted patents and 51 published patent applications and 7 EPO patents, primarily in Three-Dimensional Memory. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd., Wuhan Hydrogen Energy and Fuel Cell Industry Technology Research Institute Co., Ltd.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Di Wang. Retrieved from https://idiyas.com/inventor/di-wang-zvtskhkd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 42 

% Patents Active = 81.0

 

Average Co-Inventor Count = 4.9

ph-index = 1

Forward Citations = 10(Granted Patents)


Location History:

  • Wuhan, CN (2022 - 2024)
  • Hubei, CN (2024)

Company Filing History:


Years Active: 2022-2026

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Areas of Expertise:
Three-Dimensional Memory
Memory Fabrication
Dynamic Flash Memory
Vertical Memory Devices
NAND Memory
DRAM Architecture
Cylindrical Body
Contact Structures
Staircase Structure
Memory Device Methods
Marine Fuel Cell
Semiconductor Bonding
42 patents (USPTO):Explore Patents

Title: Di Wang: Innovator in Three-Dimensional Memory Devices

Introduction

Di Wang, an accomplished inventor based in Wuhan, China, has made significant contributions to the field of memory device technology. With a total of 19 patents to his name, Wang has demonstrated his expertise in developing advanced fabrication methods that enhance the performance and efficiency of memory devices.

Latest Patents

Di Wang's recent innovations include cutting-edge patents for three-dimensional memory devices. One notable patent outlines methods for fabricating these memory structures, which involve the formation of a bottom conductive layer on a substrate, followed by the creation of a dielectric stack composed of alternating layers. This technology not only optimizes memory performance but also introduces innovative fabrication techniques. Another significant patent describes a method for creating a three-dimensional NAND memory device. This method includes the layered formation of dielectric stacks and conductive layers, enhancing the functional capabilities of memory devices and providing great advancements in the industry.

Career Highlights

Throughout his career, Wang has worked with several prominent organizations, including Yangtze Memory Technologies Co., Ltd. and Wuhan University. His tenure at these institutions has allowed him to hone his skills and deepen his knowledge in memory technology, leading to numerous patents that have significant impact on the field.

Collaborations

Di Wang has collaborated with notable colleagues such as Wenxi Zhou and Zhiliang Xia. These partnerships have enriched his innovative efforts, merging diverse ideas and expertise to propel advancements in three-dimensional memory devices.

Conclusion

Di Wang's contributions to the field of memory technology, highlighted by his 19 patents, showcase his commitment to innovation. His latest work on three-dimensional memory devices positions him as a leading figure in the industry, paving the way for future advancements in memory technology. As he continues to push the boundaries of innovation, Wang's work remains crucial for developments in the technology sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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