The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Apr. 28, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Di Wang, Wuhan, CN;
Lei Liu, Wuhan, CN;
Yuancheng Yang, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Kun Zhang, Wuhan, CN;
Tao Yang, Wuhan, CN;
Dongxue Zhao, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A three-dimensional (3D) memory device includes a memory cell, a top contact coupled to the memory cell, and a bottom contact coupled to the memory cell. The memory cell can include a pillar, an insulating layer surrounding the pillar, a first gate contact surrounding a first portion of the insulating layer, and a second gate contact surrounding a second portion of the insulating layer. The pillar can be configured to store an electrical charge. The pillar can be a monocrystalline material. The 3D memory device can utilize dynamic flash memory (DFM), decrease defects, increase manufacturing efficiency, decrease leakage current, decrease junction current, decrease power consumption, increase storage density, increase charge retention times, and decrease refresh rates.