The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Jun. 16, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Di Wang, Wuhan, CN;

Wenxi Zhou, Wuhan, CN;

Zhong Zhang, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10W 20/20 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/435 (2026.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10W 20/20 (2026.01);
Abstract

In certain aspects, a three-dimensional (3D) memory device includes a stack structure, and a slit structure extending. The stack structure includes interleaved conductive layers and dielectric layers. Edges of the interleaved conductive layers and dielectric layers define a staircase structure. Each one of the conductive layers has a thickened portion in the staircase structure. The thickened portion extends along a first direction. The slit structure extends through the stack structure and along a second direction perpendicular to the first direction, such that the slit structure cuts off at least one, but not all, of the thickened portions of the conductive layers.


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