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For the Inventor, By the Inventor

Wuhan, China

Zhong Zhang

USPTO Granted Patents = 60 

 

Average Co-Inventor Count = 3.2

ph-index = 3

Forward Citations = 32(Granted Patents)

Forward Citations (Not Self Cited) = 20(Oct 12, 2025)


Location History:

  • Hubei, CN (2020 - 2024)
  • Wuhan, CN (2020 - 2024)

Company Filing History:

goldMedal60 out of 1,139 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2020-2025

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60 patents (USPTO):
1. 12432921 - Three-dimensional memory devices and methods for forming the same (2025-09-30),
2. 12336181 - Three-dimensional memory device having source-select-gate cut structures and methods for forming the same (2025-06-17),
3. 12315802 - Memory device and fabrication method thereof (2025-05-27),
4. 12302573 - Three-dimensional memory device with backside interconnect structures (2025-05-13),
5. 12302558 - Three-dimensional memory and manufacturing method thereof (2025-05-13),
6. 12283547 - Contact structures for three-dimensional memory devices and methods for forming the same (2025-04-21),
7. 12279429 - Three-dimensional memory devices with supporting structure for staircase region and spacer structure for contact structure and methods for forming the same (2025-04-14),
8. 12232313 - Staircase structure in three-dimensional memory device and method for forming the same (2025-02-18),
9. 12207466 - Method of forming a three-dimensional NAND memory device with reduced RC delay (2025-01-21),
10. 12205895 - Three-dimensional memory device having staircase structure and method for forming the same (2025-01-21),
11. 12167605 - Vertical memory devices (2024-12-10),
12. 12136586 - Semiconductor devices having a conductive layer stacking with an insulating layer and a spacer structure through the conductive layer (2024-11-05),
13. 12096631 - Three-dimensional NAND memory device and method of forming the same (2024-09-17),
14. 12094767 - Barrier layers for word line contacts in a three-dimensional NAND memory and fabrication methods thereof (2024-09-17),
15. 12082411 - Three-dimensional memory device with backside interconnect structures (2024-09-03),

Title: Zhong Zhang: A Visionary Inventor Leading Innovation in 3D Memory Technology

Introduction:

In the dynamic world of technology, inventors like Zhong Zhang stand out for their relentless pursuit of innovation and passion for creating a better future through their groundbreaking inventions. Zhong Zhang, a visionary inventor based in Wuhan, CN, has revolutionized the field of three-dimensional memory devices with his cutting-edge patents and unwavering dedication to technological advancement.

Latest Patents:

Among his impressive portfolio of 34 patents, Zhong Zhang's latest inventions showcase his mastery in the development of three-dimensional memory devices and cutting-edge fabrication methods. His patents include the innovative "Three-dimensional memory device and fabrication method thereof" and "Three-dimensional memory devices and fabricating methods thereof", which have garnered acclaim for their advanced designs and efficient performance.

Career Highlights:

Zhong Zhang's exceptional career is marked by his pivotal role at Yangtze Memory Technologies Co., Ltd., a prominent company at the forefront of technological innovation. As a key innovator within the company, Zhong Zhang has spearheaded groundbreaking research and development initiatives that have propelled the field of 3D NAND memory devices to new heights.

Collaborations:

In his pursuit of excellence, Zhong Zhang collaborates closely with esteemed colleagues such as Zhiliang Xia and Wenxi Zhou, who share his passion for innovation and commitment to pushing the boundaries of technology. Together, they form a dynamic team dedicated to driving forward progress in the rapidly evolving landscape of memory technology.

Conclusion:

In conclusion, Zhong Zhang's visionary contributions to the field of 3D memory technology underscore his status as a trailblazing inventor with a remarkable talent for driving innovation. His relentless pursuit of excellence, coupled with his passion for creating transformative technologies, cements his legacy as a true visionary in the world of inventions. Zhong Zhang's innovative spirit and dedication to pushing the boundaries of technology continue to inspire and shape the future of technological advancements.

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