The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Oct. 20, 2021
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Zhong Zhang, Wuhan, CN;
Zhongwang Sun, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Zhi Zhang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
In a method for fabricating a semiconductor device, an initial stack of alternatingly sacrificial word line layers and insulating layers is formed over a substrate of the semiconductor device. A connection region, a first staircase region, and a second staircase region are patterned in the initial stack. The first staircase region is shaped in the initial stack to form a first staircase, and the second staircase region is shaped in the initial stack to form a second staircase. The first staircase is formed in a first block of the initial stack and extends between first array regions of the first block. The second staircase is formed in a second block of the initial stack and extends between second array regions of the second block. The connection region is formed in the initial stack between the first staircase and the second staircase.