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For the Inventor, By the Inventor

Wuhan, China

Zhongwang Sun

This inventor holds 26 USPTO granted patents and 11 published patent applications and 3 EPO patents, primarily in 3D NAND Memory. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhongwang Sun. Retrieved from https://idiyas.com/inventor/zhongwang-sun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 96.2

 

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Wuhan, CN (2021 - 2024)
  • Hubei, CN (2023 - 2024)

Company Filing History:

goldMedal25 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents
silverMedal1 out of 299 
 
Yangtze Memory Technologies., Ltd.
 patents

Years Active: 2021-2026

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Areas of Expertise:
Three-Dimensional NAND
Memory Device
Resistance-Capacitance Delay
Support Structures
Bottom-Select-Gate
Local Contacts
Method of Forming
Staircase Structure
26 patents (USPTO):Explore Patents
1. 12615773 - Three-dimensional NAND memory device with reduced resistance-capacitance delay (2026-04-28),
2. 12232313 - Staircase structure in three-dimensional memory device and method for forming the same (2025-02-18),
3. 12207466 - Method of forming a three-dimensional NAND memory device with reduced RC delay (2025-01-21),
4. 12144175 - Three dimensional NAND memory device with novel support structures (2024-11-12),
5. 12096631 - Three-dimensional NAND memory device and method of forming the same (2024-09-17),
6. 12068250 - 3D NAND memory device and method of forming the same (2024-08-20),
7. 12046555 - 3D NAND memory device and method of forming the same (2024-07-23),
8. 12041773 - Three-dimensional NAND memory device and method of forming the same (2024-07-16),
9. 12033944 - 3D NAND memory device and method of forming the same (2024-07-09),
10. 12022656 - Local contacts of three-dimensional memory devices and methods for forming the same (2024-06-25),
11. 11910599 - Contact structures for three-dimensional memory device (2024-02-20),
12. 11862565 - Contact structures for three-dimensional memory (2024-01-02),
13. 11862558 - 3D NAND memory device and method of forming the same (2024-01-02),
14. 11839083 - 3D NAND memory device and method of forming the same (2023-12-05),
15. 11749737 - Memory device with bottom-select-gate structure and method for forming the same (2023-09-05),

Title: The Innovative Journey of Inventor Zhongwang Sun

Introduction:

Zhongwang Sun, a pioneering inventor hailing from Wuhan, China, has made significant contributions to the field of technology and innovation through his groundbreaking inventions and patents.

Latest Patents:

Zhongwang Sun's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

With a career spanning over two decades, Zhongwang Sun has established himself as a leading figure in the tech industry, holding numerous patents that have revolutionized various sectors. His dedication to pushing the boundaries of what is possible has earned him recognition on a global scale.

Collaborations:

Throughout his career, Zhongwang Sun has collaborated with top research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the successful development and commercialization of cutting-edge technologies.

Conclusion:

Inventor Zhongwang Sun's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his reputation as a visionary in the world of technology. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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