The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Oct. 22, 2021
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Yingjie Ouyang, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Lei Jin, Wuhan, CN;
Qiguang Wang, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Zhongwang Sun, Wuhan, CN;
Rui Su, Wuhan, CN;
Yueqiang Pu, Wuhan, CN;
Jiwei Cheng, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
In a method for forming a semiconductor device, a channel structure is formed that extends from a side of a substrate, where the channel structure includes sidewalls and a bottom region. The channel structure further includes a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact. A high-k layer is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.