Company Filing History:
Years Active: 2022-2023
Title: Innovations of Yingjie Ouyang in 3D NAND Memory Technology
Introduction
Yingjie Ouyang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of 3D NAND memory devices. With a total of two patents to his name, Ouyang's work is at the forefront of innovation in memory storage solutions.
Latest Patents
Ouyang's latest patents include a method for forming a semiconductor device that features a channel structure extending from a substrate. This channel structure includes sidewalls and a bottom region, with a bottom channel contact positioned at the bottom region. A channel layer is formed along the sidewalls and over the bottom channel contact, while a high-k layer is created over the channel layer along the sidewalls and over the bottom channel contact. These innovations are crucial for enhancing the performance and efficiency of 3D NAND memory devices.
Career Highlights
Yingjie Ouyang is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.
Collaborations
Ouyang collaborates with talented individuals such as Zhiliang Xia and Lei Jin, who contribute to the innovative environment at Yangtze Memory Technologies Co., Ltd. Their combined expertise fosters a culture of creativity and technological advancement.
Conclusion
Yingjie Ouyang's contributions to 3D NAND memory technology exemplify the spirit of innovation in the semiconductor industry. His patents and collaborative efforts are paving the way for future advancements in memory storage solutions.