The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Nov. 15, 2019
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yingjie Ouyang, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Lei Jin, Wuhan, CN;
Qiguang Wang, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Zhongwang Sun, Wuhan, CN;
Rui Su, Wuhan, CN;
Yueqiang Pu, Wuhan, CN;
Jiwei Cheng, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A semiconductor device is provided. The semiconductor device includes a channel structure that extends from a side of a substrate. The channel structure has sidewalls and a bottom region. The channel structure includes a bottom channel contact that is positioned at the bottom region, and a channel layer that is formed along the sidewalls and over the bottom channel contact. The channel structure further includes a high-k layer that is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.