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For the Inventor, By the Inventor

Wuhan, China

Qiguang Wang

This inventor holds 22 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in 3D NAND Memory. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2020-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qiguang Wang. Retrieved from https://idiyas.com/inventor/qiguang-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal22 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents

Years Active: 2020-2025

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Areas of Expertise:
3D NAND Flash
Memory Device
Charge Trap Layer
Fabrication Method
Reliability Enhancement
RC Delay
Native Oxide Layer
Semiconductor Device
22 patents (USPTO):Explore Patents
1. 12490434 - Memory device (2025-12-02),
2. 12471278 - Three-dimensional memory device with charge trap layer including carbon region and fabrication method thereof (2025-11-11),
3. 12317491 - Three-dimensional memory device and fabrication method for enhanced reliability (2025-05-27),
4. 12254925 - Control method and controller of 3D NAND flash (2025-03-18),
5. 12016180 - Manufacturing method of three-dimensional memory device with improved RC delay (2024-06-18),
6. 11948641 - Control method and controller of 3D NAND flash (2024-04-02),
7. 11871565 - Methods of semiconductor device fabrication (2024-01-09),
8. 11839083 - 3D NAND memory device and method of forming the same (2023-12-05),
9. 11839079 - Three-dimensional memory devices and methods for forming the same (2023-12-05),
10. 11812611 - Three-dimensional memory devices and methods for forming the same (2023-11-07),
11. 11751389 - Three-dimensional memory device with reduced memory unit interference and manufacturing method thereof (2023-09-05),
12. 11696444 - Semiconductor device and method of fabrication thereof (2023-07-04),
13. 11672115 - Methods of semiconductor device fabrication (2023-06-06),
14. 11665905 - Three-dimensional memory device and manufacturing method thereof (2023-05-30),
15. 11482535 - Three-dimensional memory devices and methods for forming the same (2022-10-25),

Title: The Innovative Journey of Inventor Qiguang Wang

Introduction: Qiguang Wang, a pioneering inventor hailing from Wuhan, China, has made significant contributions to the field of technology and innovation.

Latest Patents: Wang's latest patents include groundbreaking inventions in the realm of artificial intelligence and renewable energy technologies, showcasing his commitment to pushing the boundaries of scientific advancement.

Career Highlights: With a career spanning over two decades, Qiguang Wang has established himself as a leading figure in the tech industry, with a strong focus on developing sustainable solutions for the future. His work has been recognized globally for its ingenuity and impact.

Collaborations: Wang has collaborated with top research institutions and leading tech companies to further his inventions and bring them to market. His ability to work across disciplines and with diverse teams has been instrumental in the success of his projects.

Conclusion: In conclusion, Qiguang Wang's innovative spirit and dedication to creating a better world through technology make him a standout figure in the world of inventors. His continued pursuit of excellence is sure to lead to even more groundbreaking inventions in the years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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