The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Nov. 29, 2021
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/3003 (2013.01); H10B 41/27 (2023.02);
Abstract
Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a dielectric stack over a substrate, forming a functional layer and a semiconductor channel through the dielectric stack, forming a conductor/insulator stack based on the dielectric stack, and forming memory cells through the conductor/insulator stack. Each memory cell includes a portion of the functional layer and the semiconductor channel. At least one of the functional layer and the semiconductor channel includes a certain amount of deuterium elements.