The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Apr. 30, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Qiguang Wang, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H10B 43/27 (2023.01); H10B 41/35 (2023.01); H10B 43/20 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/35 (2023.02); H10B 43/20 (2023.02); H10B 43/35 (2023.02);
Abstract
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the memory device includes a stack structure having interleaved a plurality of conductor layers and a plurality of dielectric layers over a substrate along a vertical direction. The memory device also includes a channel structure extending in the stack structure along the vertical direction. A thickness of at least one of the plurality of dielectric layers is nominally inversely proportional to a width of the channel structure at the same depth.