This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2022-2023.
Company Filing History:
Years Active: 2022-2023
Title: Innovations of Yueqiang Pu in 3D NAND Memory Technology
Introduction
Yueqiang Pu is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of 3D NAND memory devices. With a total of two patents to his name, his work has garnered attention in the tech industry.
Latest Patents
Yueqiang Pu's latest patents include a method for forming a semiconductor device that features a channel structure extending from a substrate. This channel structure comprises sidewalls and a bottom region, along with a bottom channel contact positioned at the bottom region. Additionally, a channel layer is formed along the sidewalls and over the bottom channel contact. A high-k layer is also integrated over the channel layer along the sidewalls and over the bottom channel contact. These innovations are crucial for enhancing the performance and efficiency of 3D NAND memory devices.
Career Highlights
Yueqiang Pu is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His expertise in semiconductor devices has positioned him as a key player in the industry.
Collaborations
Yueqiang has collaborated with notable colleagues, including Yingjie Ouyang and Zhiliang Xia, contributing to advancements in their shared field of expertise.
Conclusion
Yueqiang Pu's innovative work in 3D NAND memory technology exemplifies the impact of dedicated inventors in the semiconductor industry. His patents reflect a commitment to advancing technology and improving device performance.