Yangtze Memory Technologies Co., Ltd.

Yueqiang Pu

Zhiliang Xia

Wenxi Zhou

Zhongwang Sun

Lei Jin

Qiguang Wang

Rui Su

Jiwei Cheng

Yingjie Ouyang

In a method for forming a semiconductor device, a channel structure is formed that extends from a side of a substrate, where the channel structure includes sidewalls and a bottom region. The channel structure further includes a bottom channel contact that is positioned at the bottom region and a channel layer that is formed along the sidewalls and over the bottom channel contact. A high-k layer is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

3D NAND memory device and method of forming the same

A semiconductor device is provided. The semiconductor device includes a channel structure that extends from a side of a substrate. The channel structure has sidewalls and a bottom region. The channel structure includes a bottom channel contact that is positioned at the bottom region, and a channel layer that is formed along the sidewalls and over the bottom channel contact. The channel structure further includes a high-k layer that is formed over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.

Growing community of inventors

Wuhan, China

Yueqiang Pu