The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Dec. 01, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhong Zhang, Wuhan, CN;

Wenxi Zhou, Wuhan, CN;

Di Wang, Wuhan, CN;

Zhiliang Xia, Wuhan, CN;

Zongliang Huo, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76895 (2013.01); H01L 23/5226 (2013.01); H01L 23/53257 (2013.01); H01L 23/535 (2013.01);
Abstract

A three-dimensional (3D) memory device includes interleaved conductive layers and dielectric layers. Edges of the conductive layers and dielectric layers define a plurality of stairs. The 3D memory device may also include a plurality of landing structures each disposed on a respective conductive layer at a respective stair. Each of the landing structures comprises a first layer of a first material and a second layer of a second material. The first layer is over the second layer. The second material is different from the first material.


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