The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

May. 04, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Yuancheng Yang, Hubei, CN;

Dongxue Zhao, Hubei, CN;

Tao Yang, Hubei, CN;

Lei Liu, Hubei, CN;

Di Wang, Hubei, CN;

Kun Zhang, Hubei, CN;

Wenxi Zhou, Hubei, CN;

Zhiliang Xia, Hubei, CN;

Zongliang Huo, Hubei, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H10B 41/20 (2023.01); H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H10B 41/20 (2023.02); H10B 43/20 (2023.02);
Abstract

Embodiments of three-dimensional memory devices are disclosed. A disclosed memory structure can comprises a memory cell, a bit line contact coupled to the memory cell, a bit line coupled to the bit line contact, a source line contact coupled to the memory cell, and a source line coupled to the source line contact. The memory cell comprises a cylindrical body having a cylindrical shape, an insulating layer surrounding the cylindrical body, a word line contact surrounding a first portion of the insulating layer, the word line contact coupled to a word line, and a plurality of plate line contact segments surrounding a second portion of the insulating layer, the plurality of plate line contact segments coupled to a common plate line.


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