The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jan. 06, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Linchun Wu, Wuhan, CN;
Kun Zhang, Wuhan, CN;
Wenxi Zhou, Wuhan, CN;
Zhiliang Xia, Wuhan, CN;
Wei Xie, Wuhan, CN;
Di Wang, Wuhan, CN;
Bingguo Wang, Wuhan, CN;
Zongliang Huo, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer. A first thickness of the bottom portion of the channel structure is larger than a second thickness of a top portion of the channel structure.