The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Dec. 14, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Kun Zhang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/20 (2023.01); H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
H10B 41/20 (2023.02); H10B 43/20 (2023.02);
Abstract

Three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. In certain aspects, a disclosed 3D memory device can comprise a first semiconductor structure including a core region, a staircase region, and a periphery region, and a second semiconductor structure including a second periphery circuit on a substrate. The first semiconductor structure can include a memory stack on an activated semiconductor layer in the core region, a staircase structure on a supplemental semiconductor layer in the staircase region, and a first periphery circuit on a doped semiconductor film in the periphery region. The second semiconductor structure is connected with the first semiconductor structure.


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