The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Dec. 15, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Kun Zhang, Wuhan, CN;

Wenxi Zhou, Wuhan, CN;

Linchun Wu, Wuhan, CN;

Yuhui Han, Wuhan, CN;

Changzhi Sun, Wuhan, CN;

Zhiliang Xia, Wuhan, CN;

Zongliang Huo, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); H10D 30/69 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10B 43/20 (2023.02); H10D 30/693 (2025.01); H10D 30/697 (2025.01); H10D 64/037 (2025.01);
Abstract

A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, channel hole structures in a first region of memory cells in the conductor/insulator stack, a blocking structure adjacent to the first region, and a dummy channel hole structure in the first region. The dummy channel hole structure is adjacent to the blocking structure, and includes a dielectric material that fills a channel hole to form a first dielectric filling structure.


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