Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems

Abstract

In some examples, the semiconductor structures include a stack structure, a plurality of conductive structures and a first insulating layer. The stack structure may include a plurality of first dielectric layers and gate layers which are alternately disposed; the stack structure may have a memory region and a connection region, the stack structure in the connection region may include a plurality of first dielectric layers and second dielectric layers. The plurality of conductive structures may be disposed in the connection region. The conductive structure includes conductive portions insulated from each other, each conductive portion penetrates through part of the stack structure and is connected with the gate layers. Parts of the conductive portions that penetrate through the stack structure may be disposed in a nested manner. The semiconductor structure is applied to a three-dimensional memory, so as to implement reading and writing operations of data. Other examples are disclosed.