Wuhan, China

Qi Hao

This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qi Hao. Retrieved from https://idiyas.com/inventor/qi-hao-9kibct5g

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Inventor Qi Hao

Introduction

Qi Hao is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of advanced semiconductor structures and fabrication methods.

Latest Patents

Qi Hao holds a patent for "Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems." This patent describes semiconductor structures that include a stack structure, a plurality of conductive structures, and a first insulating layer. The stack structure consists of alternating first dielectric layers and gate layers, featuring both a memory region and a connection region. The conductive structures are designed to facilitate reading and writing operations of data in three-dimensional memory systems.

Career Highlights

Qi Hao is currently employed at Yangtze Memory Technologies, Ltd. His work at this company has positioned him as a key player in the semiconductor industry. He has demonstrated expertise in creating innovative solutions that enhance memory technology.

Collaborations

Qi Hao collaborates with various professionals in his field, including his coworker Wei Xu. Their combined efforts contribute to the advancement of semiconductor technologies.

Conclusion

Qi Hao's contributions to semiconductor technology and memory systems highlight his innovative spirit and dedication to advancing the field. His patent and work at Yangtze Memory Technologies, Ltd. reflect his significant impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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