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For the Inventor, By the Inventor

Wuhan, China

Yanwei Shi

This inventor holds 12 USPTO granted patents and 14 published patent applications. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yanwei Shi. Retrieved from https://idiyas.com/inventor/yanwei-shi-yktt20xm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 12 

% Patents Active = 75.0

Average Co-Inventor Count = 4.2

ph-index = 1


Company Filing History:

goldMedal7 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents
silverMedal4 out of 311 
 
Yangtze Memory Technologies., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2024-2026

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12 patents (USPTO):Explore Patents
1. 12765030 - Semiconductor apparatus, fabrication method thereof and memory system (2026-10-13),
2. 12598965 - 3D NAND memory device with isolation trenches and fabrication method thereof (2026-04-07),
3. 12581649 - Semiconductor device, fabrication method, and memory system (2026-03-17),
4. 12557640 - Three dimensional (3D) memory device and fabrication method using self-aligned multiple patterning and airgaps (2026-02-17),
5. 12543319 - Semiconductor device including reduced-size transistors, manufacturing method thereof, and NAND memory device (2026-02-03),
6. 12446265 - Semiconductor devices and methods for manufacturing the same, and NAND memory devices (2025-10-14),
7. 12376307 - Semiconductor structure, fabrication method and three-dimensional memory (2025-07-29),
8. 12362223 - Semiconductor structure, fabrication method and three-dimensional memory (2025-07-15),
9. 12324198 - Semiconductor device and manufacture method thereof (2025-06-03),
10. 12278209 - Peripheral circuit having recess gate transistors and method for forming the same (2025-04-14),
11. 12183623 - Semiconductor devices and methods for fabricating the same (2024-12-31),
12. 12089413 - Peripheral circuit having recess gate transistors and method for forming the same (2024-09-10),

Title: The Innovative Journey of Yanwei SHI

Introduction:

Yanwei SHI is a visionary inventor hailing from Wuhan, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Yanwei SHI holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his versatility and forward-thinking approach to invention.

Career Highlights:

With a career spanning over two decades, Yanwei SHI has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations:

Throughout his career, Yanwei SHI has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge-sharing that has led to remarkable advancements in various fields.

Conclusion:

Yanwei SHI's relentless pursuit of innovation and his passion for pushing the boundaries of what is possible make him a true pioneer in the world of technology, inspiring the next generation of inventors to dream big and create a better future for all.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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